Renesas
RQK0601AGDQS - N-Channel MOSFET
RQK0601AGDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.5 A)
• Low drive current •
Rating:
1
★
(3 votes)
