
RQK0607AQDQS - N-Channel MOSFET
RQK0607AQDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 210 mΩ typ.(at VGS = 4.5 V, ID = 1.2 A)
• Low drive cur
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RQK0607AQDQS Silicon N Channel MOS FET Power Switc.
RQK0607AQDQS Distributor