
RU4H10R - N-Channel Advanced Power MOSFET
Features
• 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V
• Gate charge minimized • Low Crss( Typ. 23pF) • Extremely high dv/dt capability • 100% avalanch
Rating:
1
★
(2 votes)