
RU5H11P - N-Channel Advanced Power MOSFET
Features
• 500V/11.5A, RDS (ON) =0.55Ω (Typ.) @ VGS=10V
• Gate Charge Minimized • Low Crss • Extremely High dv/dt Capability • 100% Avalanche Tested •
Rating:
1
★
(2 votes)