
RU5H8P - N-Channel Advanced Power MOSFET
Features
•500V/8A, RDS (ON) =0.7Ω (Typ.) @ VGS=10V
• Gate charge minimized • Low Crss( Typ. 26pF) • Extremely high dv/dt capability • 100% avalanche t
Rating:
1
★
(2 votes)