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RU6H7R N-Channel Advanced Power MOSFET

Features •600V/7A, RDS (ON) =1Ω (Typ.) @ VGS=1.

RU6H7R - N-Channel Advanced Power MOSFET

Features •600V/7A, RDS (ON) =1Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 16pF) • Extremely high dv/dt capability • 100% avalanche tes

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