
RU6H9P - N-Channel Advanced Power MOSFET
Features
•600V/9.5A, RDS (ON) =0.7Ω (Typ.) @ VGS=10V
• Gate charge minimized • Low Crss( Typ. 20pF) • Extremely high dv/dt capability • 100% avalanche
Rating:
1
★
(2 votes)