
RU8H7R - N-Channel Advanced Power MOSFET
Features
•800V/7A, RDS (ON) =1.6Ω (Typ.) @ VGS=10V
• Gate charge minimized • Low Crss( Typ. 15pF) • Extremely high dv/dt capability • 100% avalanche t
Rating:
1
★
(3 votes)