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BC547 - NPN Transistor
NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise).A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .BZX55C18 - ZENER DIODE
BZX55C Series 500mW 5% ZENER DIODE Absolute Maximum Ratings (Ta= 25 oC) Items Power Dissipation Junction Temp. Storage Temp. Thermal Resistance Jun.KBP206 - GLASS PASSIVATED BRIDGE RECTIFIER
GLASS PASSIVATED BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes KBP2005 THRU KBP210 FEATURES * Ideal for printed circuit board .BC548 - NPN Transistor
NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise).1N4007W - SURFACE GENERAL PURPOSE RECTIFIERS
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1N4001W THRU 1N4007W FEATURES * Glass passivated d.TIP116 - Power Transistors
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2..HVM10 - HIGH VOLTAGE ASSEMBLIED RECTIFIER
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HVM5 THRU HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amper.BC548B - NPN Transistor
NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise).TIP121 - Power Transistors
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2..TIP122 - Power Transistors
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2..TIP117 - Power Transistors
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2..DB104S - SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION DB101S THRU DB107S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Vol.FR102 - FAST RECOVERY RECTIFIER(VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FR101 THRU FR107 FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES *.80N30 - N-Channel Enhancement Mode Power MOSFET
RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w.DB1512S - SILICON BRIDGE RECTIFIER
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1200 Volts CURRENT 1.5 Ampere FEATURES * Surge overload rating - 60 amperes.FM250A - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
)0$ 7+58 685)$&(028176&+277.< )0$ %$55,(55(&7,),(5 92/7$*(5$1*(WR9ROWV&855(17$PSHUHV )($785(6 , G H D O I R U .2N7002K - N-Channel Enhancement Mode Power MOSFET
2N7002K N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.HVP20 - HIGH VOLTAGE ASSEMBLIED RECTIFIER
HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 12000 to 20000 Volts CURRENT 1 Amperes FEATURES * Low cost * Low leakage * Isolated case * Surge overl.