.
Renesas Technology
10
HAT1089C - Silicon P-Channel Power MOSFET
HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.3.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 79 mΩ typ. (at VGS =.
Renesas Technology
8
HAT2134H - Silicon N-Channel MOSFET
HAT2134H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-r.
Renesas Technology
7
HAT1055R - Silicon P-Channel Power MOSFET
HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features • •.
Renesas Technology
7
HAT1055RJ - Silicon P-Channel Power MOSFET
HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features • •.
Renesas Technology
7
HAT2126RP - Silicon N-Channel MOSFET
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
Renesas Technology
7
HAT2226R - Silicon N-Channel Power MOSFET
HAT2226R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENES.
Renesas Technology
6
HAT2165N - Silicon N-Channel Power MOSFET
HAT2165N Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High den.
Renesas Technology
5
HAT2114R - Silicon N-Channel MOSFET
www.DataSheet4U.com HAT2114R, HAT2114RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0120-0100Z (Previous ADE-208-1544(Z)) Rev.1..
Renesas Technology
5
HAT2114RJ - Silicon N-Channel MOSFET
www.DataSheet4U.com HAT2114R, HAT2114RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0120-0100Z (Previous ADE-208-1544(Z)) Rev.1..
Renesas Technology
5
HAT2204C - Silicon N-Channel Power MOSFET
www.DataSheet4U.com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features • Low on-resistance RDS(on) = .
Renesas Technology
5
HAT2116H - Silicon N-Channel MOSFET
HAT2116H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-r.
Renesas Technology
5
HAT2207C - Silicon N-Channel Power MOSFET
HAT2207C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High de.
Renesas Technology
4
HAT2129H - Silicon N-Channel MOSFET
HAT2129H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-re.
Renesas Technology
4
HAT1069C - Silicon P-Channel Power MOSFET
HAT1069C Silicon P Channel Power MOS FET Power Switching REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Features • Low on-resistance RDS(on) = 38 mΩ typ (at V.
Renesas Technology
4
HAT2070R - Silicon N-Channel Power MOSFET
HAT2070R Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-.
Renesas Technology
4
HAT2088R - Silicon N-Channel Power MOSFET
HAT2088R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High density mounting Outline RENE.
Renesas Technology
3
HAT2168H - Silicon N-Channel MOSFET
HAT2168H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High den.
Renesas Technology
3
HAT2173H - Silicon N-Channel MOSFET
HAT2173H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 8 V gate drive • Low drive current • High densi.
Renesas Technology
3
HAT2058R - Silicon N-Channel Power MOSFET
HAT2058R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.
Renesas Technology
3
HAT2183WP - Silicon N-Channel MOSFET
HAT2183WP Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Pa.