DATA SHEET SEMICONDUCTOR S12 THRU S110 SURFACE .
CUS1205 - 1 WATT
CUS SERIES - 1 WATT Rev. 08/2000 DESCRIPTION FEATURES • 5V and 12V Inputs • Input Pi Filter • Low Profile DIP Package • 500V Isolation • Industry S.40TPS12A - Phase Control SCR
40TPS...A/40TPS... High Voltage Series Vishay High Power Products Phase Control SCR, 35 A DESCRIPTION/FEATURES 2 (A) The 40TPS...A High Voltage Seri.TP10AC220S12W - 10W 4KVAC isolated wide voltage input AC / DC power module
TP10AC : 10W 4KVAC AC/DC TP10AC10W, (60mW),0.1mA,(50.8*25.4*15.3mm), 4KV。,EMC ,EMC IEC/EN61000-4、 CISPR22/EN55022、UL60950/EN60950/EN60601, 、、, 。 .TP03AZ220S12W - 3W 2.5KVAC isolated wide voltage input AC / DC power module
TP03AZ : 3W 2.5KVAC AC/DC TP03AZ3W,, 。、、、,,, ,,,EMI, ,2500V ,、、 。、、、 、 。 : 4:1 、, 、, 、 、 ROHS –40℃70℃ TP03AZ220S03W RTP03AZ220S05W.UCS1216 - 16 high output LED meteor lamp driver
16 LED –UCS1216 : , 16 NMOS ,, LED 。 : ★CMOS 5V ★ DM134 ★NMOS , 20V, 40mA ★,, ★ ::DIP24( DIP16) http://www.DataSheet4U.net/ :( UCS1216 ,UCS121.ADS12C80G - 3 Quadrants Triacs
ADV ADS12C60G/80G 3 Quadrants Triacs General Description High current dens.KIA78S12P - THREE TERMINAL POSITIVE VOLTAGE REGULATORS
SEMICONDUCTOR TECHNICAL DATA KIA78S05P~KIA78S24P BIPOLAR LINEAR INTEGRATED CIRCUIT THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 8V, 9V, 10V, 1.DS120030G2 - SiC Schottky Barrier Diode
Datasheet SDS120J030G2 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.74LS128 - LSTTL type four 2-input NOR line driver
54LS128/74LS128 LSTTL 2 75Ω : tpd=12ns Pd=5.5mW/ : (1/4) : : A H × H L B H H × L Y L L L H : 74Ⅱ Vcc VIH VIL IOH IOL TA -40 4.75 2 0.FS12KMA-5A - Nch POWER MOSFET
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change. FS12KMA-5A MITSUBISHI Nch POWER MOSFET FS12KMA-5A HIGH-SPEED .MSS1807 - (MSS1807 / MSS1507 / MSS1207 / MSS0907 / MSS0607 / MSS0307) 3/ 6/ 9/ 12 / 15 / 18 VOICE ROM
MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3"/ 6"/ 9"/ 12" / 15" / 18" VOICE ROM September 1996 Features Single power supply can opera.NAS1291 - Nuts
MS21042 / NAS1291 Series Specifications Nuts, Self-locking, 450°, Reduced Hexagon, Reduced Height, Ring Base, Non-Corrosion Resistant Steel 35 Size D.200NS120 - Standard Recovery Diodes
Naina Semiconductor Ltd. 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No.DS120030G3 - SiC Schottky Barrier Diode
Datasheet SDS120J030G3 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.CS12N05AEP-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Trench MOSFET ○R CS12N05 AEP-G General Description: VDSS 45 V CS12N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID .S202S12 - SIP Type SSR with Snubber Circuit and Mouning Capability for External Heat Sink
S102S11/S102S12/S202S11/S202S12 S102S11/S102S12 S202S11/S202S12 s Features 1. High radiation resin mold package 2. Built-in snubber circuit 3. Built-.CS1237 - 24-bit Sigma-Delta ADC
CS1237 24-bit Sigma-Delta ADC Rev 1.1 : 1079 A 9 :518067 :+(86 755)86169257 :+(86 755)86169057 :www.chipsea.com : : Rev.1.1 1 , 19 REV.BSS123W - N-Channel MOSFET
Features +LJK'HQVH&HOO'HVLJQIRU([WUHPHO\/RZ5'621 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK 6XUIDFH0RXQW3DFNDJH (SR[\0HHWV8/9).CRTS120N15N - Trench N-MOSFET
() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according .SS12A - Schottky Barrier Rectifier
R FEATURES Low Power Loss High Efficiency Ideal For Automated Placement Guard Ring For Over-voltage Protection High Surge Current Capability MECHANICAL .