S3A Datasheet | Specifications & PDF Download

MOSFET – Power, N-Channel, Automotive, SUPERFET) III, Easy-Drive 650 V, 25 mW NVCR8LS025N65S3A Features • Typical RDS(on) = 19.9 mW at VGS = 10 V • T

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NTNS3A65PZ MOSFET – Single, P-Channel, Small Signal, SOT-883 (XDFN3), 1.0 x 0.6 x 0.4 mm -20 V, -281 mA Features • Single P−Channel MOSFET • Ultra L

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N N-CHANNEL MOSFET R JCS3AN150A MAIN CHARACTERISTICS ID VDSS Rdson-max （@Vgs=10V）） Qg-typ 3A 1500 V 8.0Ω 37nC Package    UPS APPLICATIO

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NTLUS3A90PZ MOSFET – Power, Single, P-Channel, ESD, mCool, UDFN, 1.6x1.6x0.55 mm -20 V, -5.0 A Features • UDFN Package with Exposed Drain Pads for E

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ES3A thru ES3J Surface Mount Super Fast Rectifiers * “G” Lead(Pb)-Free REVERSE VOLTAGE 50 TO 600 VOLTS FORWARD CURRENT 3.0 AMPERE Features: *For Sur

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NTLUS3A90PZC Power MOSFET −20 V, −5.0 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads f

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NTLUS3A39PZ MOSFET – Power, Single, P-Channel, ESD, UDFN, 1.6x1.6x0.55 mm -20 V, -5.2 A Features • UDFN Package with Exposed Drain Pads for Excellen

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N N-CHANNEL MOSFET R JCS3AN150A MAIN CHARACTERISTICS ID VDSS Rdson-max （@Vgs=10V）） Qg-typ 3A 1500 V 8.0Ω 37nC Package    UPS APPLICATIO

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N N-CHANNEL MOSFET R JCS3AN150A MAIN CHARACTERISTICS ID VDSS Rdson-max （@Vgs=10V）） Qg-typ 3A 1500 V 8.0Ω 37nC Package    UPS APPLICATIO

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NTLUS3A39PZC Power MOSFET −20 V, −5.2 A, Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN mCoolt Package Features • UDFN Package with Exposed Drain Pads f

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NTNS3A91PZ MOSFET – Single, P-Channel, Small Signal, XLLGA3, 0.62 x 0.62 x 0.4 mm -20 V, -223 mA Features • Single P−Channel MOSFET • Ultra Small an

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RX65T080PS3A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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Suntan® Su® ES3A THRU ES3J SURFACE MOUNT SUPER FAST RECTIFIER REVERSE VOLTAGE 50 to 600 Volts FORWARD CURRENT 3.0 Ampere FEATU RE S ◆Plastic package

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ES3A/AB - ES3D/DB Green 3.0A SURFACE MOUNT SUPER-FAST RECTIFIER Features  Glass Passivated Die Construction  Super-Fast Recovery Time for High Effi

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N N-CHANNEL MOSFET R JCS3AN150A MAIN CHARACTERISTICS ID VDSS Rdson-max （@Vgs=10V）） Qg-typ 3A 1500 V 8.0Ω 37nC Package    UPS APPLICATIO

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ES3AB thru ES3JB Surface Mount Super Fast Rectifiers REVERSE VOLTAGE 50 TO 600 VOLTS FORWARD CURRENT 3.0 AMPERE Features: * High current capability *

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NTLUS3A40PZ Power MOSFET Features −20 V, −9.4 A, mCoolt Single P−Channel, ESD, 2.0x2.0x0.55 mm UDFN Package • UDFN Package with Exposed Drain Pads fo

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creat by ART HS3AB - HS3MB 3.0AMPS High Efficient Surface Mount Rectifiers SMB/DO-214AA Features — Glass passivated junction chip. — For surface mou

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ES3A ES3D ES3A ES3D Superfast Switching Surface Mount Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden für die Oberfläche

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