S4K Datasheet | Specifications & PDF Download

Production specification Silicon Bridge Rectifiers FEATURES z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost con

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SuperPlanarTM Bridge Rectifiers Production specification GBS4J--GBS4K Features  Planar passivated chips  Ultra low leakage reverse current  High

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CAT.No.TJ 536 SILICON BRIDGE DIODES USKB SERIES Summary Bridge diodes are being required to take up less space accompanying the reduced size of el

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S4A - S4M Taiwan Semiconductor 4A, 50V - 1000V Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● L

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Elektronische Bauelemente S4KBP20-C ~ S4KBP80-C Voltage 200V ~ 800V 4.0 Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product FEATURES Ideal

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Elektronische Bauelemente S4KBP20-C ~ S4KBP80-C Voltage 200V ~ 800V 4.0 Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product FEATURES Ideal

Rating: 1 ★ (2 votes)

Elektronische Bauelemente S4KBP20-C ~ S4KBP80-C Voltage 200V ~ 800V 4.0 Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product FEATURES Ideal

Rating: 1 ★ (2 votes)

Elektronische Bauelemente S4KBP20-C ~ S4KBP80-C Voltage 200V ~ 800V 4.0 Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product FEATURES Ideal

Rating: 1 ★ (2 votes)

MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE FS3UM-10 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8

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