S6K Datasheet | Specifications & PDF Download

CAT.No.TJ 536 SILICON BRIDGE DIODES USKB SERIES Summary Bridge diodes are being required to take up less space accompanying the reduced size of el

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US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 2.0 1.3 0.85Max. zFeatures 1) Two

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TS6KL60 – TS6KL100 Taiwan Semiconductor 6A, 600V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified available ● Thin Single-in-line low

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US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 zFeatures 1) Two Nch MOSFETs are

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TS6KL60 – TS6KL100 Taiwan Semiconductor 6A, 600V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified available ● Thin Single-in-line low

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QS6K21 Nch 45V 1A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 45V 420mW 1A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protectio

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Transistors 2.5V Drive Nch+Nch MOS FET QS6K1 QS6K1 zStructure Silicon N-channel MOS FET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection D

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TS6K40 thru TS6K80 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circ

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TS6K40 thru TS6K80 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circ

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TS6K40 thru TS6K80 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circ

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SuperPlanarTM Bridge Rectifiers Production specification GBS6J--GBS6K Features  Planar passivated chips  Ultra low leakage reverse current  High

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Production specification Silicon Bridge Rectifiers GBS6A--GBS6M FEATURES z Rating to 1000V PRV z Surge overload rating to 140 Amperes peak Pb Lea

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QS6K21FRA Nch 45V 1A Power MOSFET VDSS RDS(on) (Max.) ID PD 45V 420mW 1A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode.

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MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # S6A THRU S

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TS6KL60 – TS6KL100 Taiwan Semiconductor 6A, 600V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified available ● Thin Single-in-line low

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US6K1 Transistors 2.5V Drive Nch+Nch MOS FET US6K1 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) ÌËÓÌê îòð ïòí ðòêë ðòêë øê÷ øë

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