S8550LT1 Datasheet | Specifications & PDF Download

S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S8550LT1 TRANSISTOR (PNP) FEATURES SOT-23 1. BASE 2. EMITT

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM

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SS8550LT1 PNP Epitaxial Silicon Transistor 1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Collector-Emitter Voltage: VCEO=

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PNP General Purpose Transistors P b Lead(Pb)-Free VCEO SS8550LT1 Value -25 -40 -6.0 -1500 3 1 2 SOT-23 SS8550LT1=Y2 -0.1 -100 -100 E=-20Vdc,IE= 0

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