Features * Low power loss, high efficiency * Guard.
Inchange Semiconductor
2SB1090 - Silicon PNP Power Transistors
isc Silicon PNP Power Transistor 2SB1090 DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= .
JGD
SB1090CT - Dual Common Cathode Schottky Rectifiers
Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/.
JGD
SB1090 - Schottky Barrier Rectifiers
Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/.
JGD
SB1090FCT - Dual Common Cathode Schottky Rectifiers
Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/.
JGD
SB1090F - Isolated Schottky Barrier Rectifiers
Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/.
