SB1090 Datasheet | Specifications & PDF Download

SB1090 Schottky Barrier Rectifiers

Features * Low power loss, high efficiency * Guard.

SB1090F (JGD)

Isolated Schottky Barrier Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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2SB1090 (Inchange Semiconductor)

Silicon PNP Power Transistors

isc Silicon PNP Power Transistor 2SB1090 DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC=

(21 views)

SB1090 (JGD)

Schottky Barrier Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

(19 views)

SB1090FCT (JGD)

Dual Common Cathode Schottky Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

(15 views)

SB1090CT (JGD)

Dual Common Cathode Schottky Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

(14 views)

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