SB1560 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION ·With TO-3PN package

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Darlington 2SB1560 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SB1520TL..SB15100TL Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max. forward volta

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SB1520 thru SB15100 Schottky Barrier Rectifiers Reverse Voltage 35 to 100V Forward Current 15A Feature & Dimensions * Plastic package has underwri

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SB1520 SB15100 SB1520 SB15100 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2007-06-19 Nominal current Nennstrom Ø8 ±0.1

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SB 1520 SB 15100 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max. forward volt

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SB 1520S SB 15100S Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max. forward vo

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