R FEATURES Low Forward Voltage Drop Peak reverse v.
Silan Microelectronics
SBD10C150F - 150V SCHOTTKY RECTIFIER
10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica.
Shindengen Electric Mfg.Co.Ltd
S60SC6M - Schottky Rectifiers (SBD)(60V 60A)
SHINDENGEN Schottky Rectifiers (SBD) Dual S60SC6M 60V 60A FEATURES •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ Small ƒÆ jc •œ High current capacity A.
Silan Microelectronics
SBD10C100F - 100V SCHOTTKY RECTIFIER
SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
Silan Microelectronics
SBD30C45S - 45V SCHOTTKY RECTIFIER
SBD30C45T/PN/S/PS_Datasheet 30A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD30C45T/PN/S/PS is Schottky rectifier fabricated in silicon epitaxial planar tec.
Silan Microelectronics
SBD20C100F - 100V SCHOTTKY RECTIFIER
SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
Sigetronics
SBD200 - Schottky Barrier Diode
Schottky Barrier Diode (GaAs) Features • Anti-parallel • High Cut-off frequency • Low Series Resistance • Low Capacitance • Designed for Easy Circuit .
Nihon Inter Electronics
FSH10A06 - SBD
S B D T y p e : FSH10A06 FEATURES *Similar to TO-220AC Case *Fully Molded Isolation *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Su.
Nihon Inter Electronics
FRH20A15 - SBD
S B D T y p e : FRH20A15 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Anode Common *High Voltage Low Leakage Current *Low.
Nihon Inter Electronics
FCL30A015 - SBD
S B D T y p e : FCL30A015 FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Oring Diode *High S.
Silan Microelectronics
SBD10C100T - 100V SCHOTTKY RECTIFIER
SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
Silan Microelectronics
SBD20C100T - 100V SCHOTTKY RECTIFIER
SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
Nihon Inter Electronics
EA60QC10-F - SBD
6A Avg. 100 Volts SBD EA60QC10-F INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS.
Nihon Inter Electronics
FCH10A15 - SBD
S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta.
Mospec Semiconductor
SBD1630CT - SCHOTTKY BARRIER RECTIFIERS
MOSPEC SBD1630CT thru SBD1645CT SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier.
Panasonic
MA742 - Schottky Barrier Diodes (SBD)
Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3X716 (MA7.
Nihon Inter Electronics
FSH04A03LB - SBD
4A Avg. 30 Volts SBD FSH04A03LB INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0.2 0 AVERAGE FORWARD PO.
LG
LC320WXN-SBD1 - WXGA TFT LCD
Global LCD Panel Exchange Center www.panelook.com Product Specification SPECIFICATION FOR APPROVAL LC320WXN ( ̻ ) Preliminary Specification ( ) Fi.
Nihon Inter Electronics
GCH10A10 - SBD
10A Avg. 100 Volts SBD GCH10A10 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0 FORWARD CURRENT VS. VOL.
Nihon Inter Electronics
EA30QS04-F - SBD
3A Avg. 40 Volts SBD EA30QS04-F INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS.
