R FEATURES Low Forward Voltage Drop Peak reverse v.
Silan Microelectronics
SBD10C150F - 150V SCHOTTKY RECTIFIER
10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica.
Silan Microelectronics
SBD10C100F - 100V SCHOTTKY RECTIFIER
SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
Silan Microelectronics
SBD20C45T - 45V SCHOTTKY RECTIFIER
SBD20C45T/F_Datasheet 20A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD20C45T/F is schottky rectifier fabricated in silicon epitaxial planar technology, G.
Silan Microelectronics
SBD20C100T - 100V SCHOTTKY RECTIFIER
SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
Nihon Inter Electronics
FCQ30A04 - SBD
S B D T y p e : FCQ30A04 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surg.
Shindengen Electric Mfg.Co.Ltd
S60SC6M - Schottky Rectifiers (SBD)(60V 60A)
SHINDENGEN Schottky Rectifiers (SBD) Dual S60SC6M 60V 60A FEATURES •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ Small ƒÆ jc •œ High current capacity A.
LG
LC320WXN-SBD1 - WXGA TFT LCD
Global LCD Panel Exchange Center www.panelook.com Product Specification SPECIFICATION FOR APPROVAL LC320WXN ( ̻ ) Preliminary Specification ( ) Fi.
Sigetronics
SBD200 - Schottky Barrier Diode
Schottky Barrier Diode (GaAs) Features • Anti-parallel • High Cut-off frequency • Low Series Resistance • Low Capacitance • Designed for Easy Circuit .
Silan Microelectronics
SBD30C45S - 45V SCHOTTKY RECTIFIER
SBD30C45T/PN/S/PS_Datasheet 30A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD30C45T/PN/S/PS is Schottky rectifier fabricated in silicon epitaxial planar tec.
Nihon Inter Electronics
GSH10A10B - SBD
S B D T y p e : GSH10A10B FEATURES *Similar to TO-220AB Case *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 .
Silan Microelectronics
SBD20C100F - 100V SCHOTTKY RECTIFIER
SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
Nihon Inter Electronics
FCQ10A03L - SBD
S B D T y p e : FCQ10A03L FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop.
Panasonic
MA742 - Schottky Barrier Diodes (SBD)
Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3X716 (MA7.
Silan Microelectronics
SBD20C45F - 45V SCHOTTKY RECTIFIER
SBD20C45T/F_Datasheet 20A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD20C45T/F is schottky rectifier fabricated in silicon epitaxial planar technology, G.
Nihon Inter Electronics
EC30LA02 - SBD
3A Avg. 20 Volts SBD EC30LA02 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS. .
Nihon Inter Electronics
FRH20A10 - SBD
20A Avg. 100 Volts SBD FRH20A10 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) FORWARD CURRENT VS. VOLTAGE 0˚ 180˚ θ CON.
Prisemi
PSBDAF40V5 - Schottky Barrier diode
PSBDBFXXXV5 Schottky Barrier diode Feature ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
Nihon Inter Electronics
FRH20A15 - SBD
S B D T y p e : FRH20A15 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Anode Common *High Voltage Low Leakage Current *Low.
Nihon Inter Electronics
FCL30A015 - SBD
S B D T y p e : FCL30A015 FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Oring Diode *High S.