10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

S B D T y p e : FCQ30A04 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surg

32-Bit Microcontroller TC39x 32-Bit Single-Chip Microcontroller BC/BD-Step 32-Bit Single-Chip Microcontroller Data Sheet V 1.2, 2021-03 Microcontrolle

SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

Schottky Barrier Diode (GaAs) Features • Anti-parallel • High Cut-off frequency • Low Series Resistance • Low Capacitance • Designed for Easy Circuit

Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection I Features • Two isolated elements are c

Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching 1.6±0.1 0.80±0.05 Unit: mm ■ Features • Forward curren

Schottky Barrier Diodes (SBD) MA2J732 (MA732) Silicon epitaxial planar type Unit: mm For switching For wave detection I Features • Low forward volta

S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta

8A Avg. 100 Volts SBD FCH08U10

SBD20C45T/F_Datasheet 20A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD20C45T/F is schottky rectifier fabricated in silicon epitaxial planar technology, G

Feature  Forward Current: 500mA  Reverse voltage: 30V  Low forward voltage  Low leakage current  Trench MOS barrier Schottky technology  Ultra S

MOSPEC SBD1630CT thru SBD1645CT SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier

5A Avg. 45 Volts SBD 50PQSA045

Feature  Ultra Small mold type. (DFN1006-2L)  Low IR  High reliability. Applications  Low current rectification Construction  Silicon epitaxial p

3A 200A Axial S B D T y p e : 30PHA20 FEATURES * High VRM SBD * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability OU

Feature  Ultra Small mold type. DFN0603-2L  Low IR  High reliability. Applications  Low current rectification Construction  Silicon epitaxial pla

Feature  Ultra Small mold type. (DFN1006-2L)  Low IR  High reliability. Applications  Low current rectification PSBD2FD40V1HA Schottky Barrier Di

Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3X716 (MA7