10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

S B D T y p e : FCQ30A04 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surg

SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

Schottky Barrier Diode (GaAs) Features • Anti-parallel • High Cut-off frequency • Low Series Resistance • Low Capacitance • Designed for Easy Circuit

Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching 1.6±0.1 0.80±0.05 Unit: mm ■ Features • Forward curren

Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3X716 (MA7

SBD20C45T/F_Datasheet 20A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD20C45T/F is schottky rectifier fabricated in silicon epitaxial planar technology, G

Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection I Features • Two isolated elements are c

32-Bit Microcontroller TC39x 32-Bit Single-Chip Microcontroller BC/BD-Step 32-Bit Single-Chip Microcontroller Data Sheet V 1.2, 2021-03 Microcontrolle

3A 200A Axial S B D T y p e : 30PHA20 FEATURES * High VRM SBD * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability OU

5A Avg. 45 Volts SBD 50PQSA045

Feature  Forward Current: 500mA  Reverse voltage: 30V  Low forward voltage  Low leakage current  Trench MOS barrier Schottky technology  Ultra S

S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta

SHINDENGEN Schottky Rectifiers (SBD) Single SF5S6 60V 5A FEATURES •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ Fully Isolated Molding •œ Dielectric st

8A Avg. 100 Volts SBD FCH08U10

S B D T y p e : FSQ05A03L FEATURES *Similar to TO-220AC Case *Fully Molded Isolation *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficien

S B D T y p e : FCQ10A06 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power