SC017 Datasheet | Specifications & PDF Download

1200V, 17 mΩ N-Channel mSiC™ MOSFET MSC017SMA120B Product Overview 1200V, 17 mΩ typical at 20 VGS, 19 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-Ch

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BSC017N04NS G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according

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ISC017N04NM5 MOSFET OptiMOSTM 5 Power-Transistor, 40 V Features • Battery powered application • LV motor drives • Very low on-resistance RDS(on) • 10

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SC017 (1.0A) GENERAL USE RECTIFIER DIODE (200V to 400V / 1.0A ) Outline drawings 3±0.2 Marking 2.5±0.2 2.6±0.2 1.35±0.4 2 MIN. 5.1-0.1 +0.4 1.35

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