SD1563 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to

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SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . . 350 WATTS @ 10 µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250 µ SEC PULSE WI

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V (Min) ·Wide Area of Safe Operation ·Complement to

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type

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