SF7 Datasheet | Specifications & PDF Download

SSF7509 Main Product Characteristics: VDSS RDS(on) ID 75V 6.5mohm(typ.) 80A TO220 Marking and pin Assignment Schematic diagram Features and Benefits:

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T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L-53SF7BT Features MECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. BOTH WATER CLEAR LENS

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T-1 3/4 (5mm) INFRARED EMITTING DIODE L-53SF7C Features zMECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. zBOTH WATER CLEAR LENS A

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Main Product Characteristics VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Features and Benefits TO-220  Advanced MOSFET process technology  Special

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF7N03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF7N03HD

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF7N03Z/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF7N03Z M

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General Description The WSF70P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate

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Elektronische Bauelemente SSF7002K-C 300mA, 60V, RDS(ON) 2.5Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF7P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF7P03HD

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TSP7N80M / TSF7N80M TSP7N80M / TSF7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar str

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MMSF7N03HD Preferred Device Power MOSFET 7 Amps, 30 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logi

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                                 Main Product Characteristics: VDSS 75V RDS(on) 6mΩ (typ.) ID 100A D2PAK  Features and Benefits:  Advanced MOS

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10 Standard Ratings SF/K series Dimension (Unit: mm) ø0.58±0.05 ø3.0 ±0.2 ø0.6 ±0.05 Marking 1 (SF70K−SF119K) （40.5） 7.5±0.5 35±1.5 Note: The v

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Main Product Characteristics: VDSS RDS(on) 650V 1.26Ω (typ.) ID 7A Features and Benefits: TO220F  Advanced Process Technology  Special designe

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TSP7N60M/TSF7N60M TSP7N60M/TSF7N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe

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DATA S H E E T Thermal Cutoff SEFUSETM SF/E SERIES ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT NEC's thermal cutoff SE/E series

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SF1G THRU SF7G GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Features Superfast recovery time

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SSF7N60B November 2001 SSF7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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MMSF7P03HD Preferred Device Power MOSFET 7 A, 30 V, P−Channel SO−8 These miniature surface mount devices are designed for use in low voltage, high spe

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6 Standard Ratings SF/R series Dimension (Unit: mm) ø1.0 ±0.1 ø4.0 ±0.2 ø1.0 ±0.1 18.5(33)±3.0 8.5±0.5 33±3.0 Note: The dimensions for long lead

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