SHIKUES Datasheet | Specifications & PDF Download

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N-Channel Enhancement Mode MOSFET Feature ●30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V. ●

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SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 100V Forward Current - 0.15A FEATURES • High breakdown voltage • Low turn-on voltage • Guard ring constr

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SZT560A NPN Low Saturation Transistor The devices are designed with high current gain and low saturation voltage with collector currents up to 3A cont

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EABS21 THRU EABS26 Surface Mount Super fast Recovery Bridge Rectifier Reverse Voltage –100 to 600 V Forward Current – 2 A FEATURES • For surface moun

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EABS21 THRU EABS26 Surface Mount Super fast Recovery Bridge Rectifier Reverse Voltage –100 to 600 V Forward Current – 2 A FEATURES • For surface moun

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EABS21 THRU EABS26 Surface Mount Super fast Recovery Bridge Rectifier Reverse Voltage –100 to 600 V Forward Current – 2 A FEATURES • For surface moun

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EABS21 THRU EABS26 Surface Mount Super fast Recovery Bridge Rectifier Reverse Voltage –100 to 600 V Forward Current – 2 A FEATURES • For surface moun

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