SIHG30N60E Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V ·100% a

Rating: 1 ★ (5 votes)

www.vishay.com SiHG30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC

Rating: 1 ★ (2 votes)