REED RELAYS PART NUMBER SIP - XX XX XX Producrs.
B0505S-1W - SINGLE OUTPUT MINIATURE SIP/DIP
B_S-1W & B_D-1W Series 1W, FIXED INPUT ISOLATED & UNREGULATED SINGLE OUTPUT MINIATURE SIP/DIP PACKAGE RoHS PART NUMBER SYSTEM B0505S-1W Rated Power Pa.SIP-1A05 - REED RELAYS
REED RELAYS PART NUMBER SIP - XX XX XX Producrs Name Contact Form Options Nominal Voltage Picture Part Number Schematic Contact Form (Botto.B1212S-1W - SINGLE OUTPUT MINIATURE SIP/DIP
B_S-1W & B_D-1W Series 1W, FIXED INPUT ISOLATED & UNREGULATED SINGLE OUTPUT MINIATURE SIP/DIP PACKAGE RoHS PART NUMBER SYSTEM B0505S-1W Rated Power Pa.2CL4512 - (2CL4509 / 2CL4512) High Voltage Diodes
2CL4509 2CL4512 Power Semiconductor Technology High Voltage Diodes for Micro-Wave Oven Features IF AV 450mA VRRM 9kV ,12kV High reliability Outline .AS1117 - 800mA Low Dropout Regulator
AS1117 800mA Low Dropout Regulator SCSI-II Active Terminator FEATURES • Guaranteed 800mA Output • Three Terminal Adjustable Or Fixed 1.5V, 2.5V, 3V, .AS2951 - (AS2950 / AS2951) 150mA Low Dropout Voltage Regulators
AS2950/AS2951 150mA Low Dropout Voltage Regulators FEATURES • 5.0V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current • Low Dropout.B1205S-1W - SINGLE OUTPUT MINIATURE SIP/DIP
B_S-1W & B_D-1W Series 1W, FIXED INPUT ISOLATED & UNREGULATED SINGLE OUTPUT MINIATURE SIP/DIP PACKAGE RoHS PART NUMBER SYSTEM B0505S-1W Rated Power Pa.74164 - 8 BIT SIPO SHIFT REGISTER
M54HC164 M74HC164 8 BIT SIPO SHIFT REGISTER . . . . . . . . HIGH SPEED tPD = 15 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA.SIP-1A12 - REED RELAYS
REED RELAYS PART NUMBER SIP - XX XX XX Producrs Name Contact Form Options Nominal Voltage Picture Part Number Schematic Contact Form (Botto.BSS145 - SIPMOS Small-Signal Transistor
BSS 145 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.4 2.3 V Pin 1 G Pin 2 S Pin 3 D Type BSS 145 Type BSS 14.18P06P - SIPMOS Power-Transistor
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating.Si2306 - N-Channel Enhancement Mode Field Effect Transistor
Si2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.