SK52-A Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·100% avalanche tested ·Minimum Lot

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Features · Low Power Loss,High Efficiency · Ideally Suited for Automatic Assembly · For Use in Low Voltage Application · Plastic Case Material has UL

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2SK520-VB 2SK520-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = -

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isc N-Channel MOSFET Transistor 2SK528 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·100% avalanche tested ·Min

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Fast Switching Speed ·100% avalan

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MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. FEATURES: VERY HIGH CURRENT, LOW DROPOUT SURFACE MOUNT VOLTAGE REGULATORS 5275 SERIES (315) 701-6751 470

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MIL-PRF-38534 CERTIFIED DUAL +/VOLTAGE REGULATOR M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 5211 SERIES (315) 701-6751 FEATURES: Interna

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SK52 THRU SK520 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Amperes SMB 0.086 (2.20) 0.077 (1.95

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SK52CH – SK520CH Taiwan Semiconductor 5A, 20V - 200V Schottky Barrier Surface Mount Rectifier FEATURES ● AEC-Q101 qualified ● Low power loss, high e

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Technical Data Data Sheet N0107, Rev. B SK520 SCHOTTKY RECTIFIER SK520 SMC Features  Schottky Barrier Chip  Guard Ring Die Construction for Tran

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2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK522 Abs

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SK54MAFG THRU SK520MAFG Chip Integration Technology Corporation 5A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mount

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SK52B - SK515B 5.0 Amp. Surface Mount Schottky Barrier Rectifier DO-214AA (SMB) Voltage 20 V to 150 V Current 5.0 A FEATURES • Low profile packag

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