SL12N Datasheet | Specifications & PDF Download

N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 12A 650V 0.73Ω 45nC SL12N65F    LED APPLICATIONS  High efficiency swi

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Low VF Chip Schottky Barrier Rectifier Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal

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SL12N thru SL14N Low VF Schottky Barrier Diodes P b Lead(Pb)-Free Features: *Plastic package has Underwriters Laboratory Flammability Classi cation 94

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