| No |
Part Number |
Description |
Manufacture |
PDF |
| 311 |
SM2-105-01 |
EDGE Mount Socket Strip
|
Samtec
|
|
| 310 |
SM2-1xx-xx |
EDGE Mount Socket Strip
|
Samtec
|
|
| 309 |
SM20 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SM6.8 THRU SM200CA
Breakdown Voltage Peak Pulse Power
6.8 to 200 Volts 400 Watts
FEATURES
• Plastic package has Underwriters Laboratory Flammability Cl |
MIC
|
|
| 308 |
SM200 |
SNAP Engine Modules
DATASHEET
SM200 Module
©2008-2018 Synapse Wireless, All Rights Reserved. All Synapse products are patent pending. Synapse , the Synapse logo, SNAP, and Portal are all registered trademarks of Synapse |
Synapse
|
|
| 307 |
SM200 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SM6.8 THRU SM200CA
Breakdown Voltage Peak Pulse Power
6.8 to 200 Volts 400 Watts
FEATURES
• Plastic package has Underwriters Laboratory Flammability Cl |
MIC
|
|
| 306 |
SM2000 |
Surface Mount Si-Rectifiers
|
Diotec Semiconductor
|
|
| 305 |
SM2000 |
(SM513 - SM2000) Surface Mount Rectifiers
SM513-SM2000
Surface Mount Rectifiers
REVERSE VOLTAGE:1300-2000V CURRENT: 1.0 A
DO - 213AB
Features
¡ó ¡ó ¡ó ¡ó Glass passivated device Ideal for surface mouted applications Low leakage curr |
Luguang Electronic
|
|
| 304 |
SM2000 |
(SM513 - SM2000) SURFACE MOUNT RECTIFIER
BL
FEATURES
¡ó ¡ó ¡ó ¡ó ¡ó ¡ó ¡ó ¡ó ¡ó
GALAXY ELECTRICAL
SM513 --- SM2000
REVERSE VOLTAGE:13000-2000V CURRENT: 1.0 A
DO - 213AB
SURFACE MOUNT RECTIFIER
Glass passivated device Ide |
Galaxy Semi-Conductor
|
|
| 303 |
SM2000 |
(SM513 - SM2000) silicon rectifier diodes
SM 513, SM 516, SM 518, SM 2000
/5
5
0 ;
<
6
<
<
-
2-
6
<
<
-
: <
-
/9 7 4 18 7 ( * #8> # (.( (.( (.( (.(
<
|
Semikron
|
|
| 302 |
SM2000 |
(SM513 - SM2000) 1.0 Amp.Surface Mount High Voltage Rectifier
|
Thinki Semiconductor
|
|
| 301 |
SM2001CSK |
Dual Enhancement Mode MOSFET
SM2001CSK
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
· N-Channel
20V/9.5A, RDS(ON) =14mW(max.) @ VGS = 4.5V RDS(ON) =18mW(max.) @ VGS = 2.5V
· P-Channel
-20V/-6A, RDS(ON) =45mW(ma |
Sinopower
|
|
| 300 |
SM2004NSD |
N-Channel Enhancement Mode MOSFET
SM2004NSD
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 20V/7A,
RDS(ON)= 22mW(max.) @ VGS= 10V RDS(ON)= 28mW(max.) @ VGS= 4.5V RDS(ON)= 54mW(max.) @ VGS= 2.5V
· 100% UIS and Rg |
Sinopower
|
|
