| Part Number | Description | Manufacture |
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P-Channel MOSFET · -30V/-33A, RDS(ON) =18mW(max.) @ VGS =-10V RDS(ON) =30mW(max.) @ VGS =-4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Pin Description Top View Bottom View DDDD Top View Bottom View DDDD SSSG DFN3x3-8(punch t |
 Sinopower |
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PCM small infrared remote control system receiver module (B.P.F) f0 SM3376 SM3386 SM3406 SM3576 λp www.DataSheet.net/ A. ：1.2 3 2004.05.14 Datasheet pdf - http://www.DataSheet4U.co.kr/ B. SM3XX6 C. www.DataSheet.net/ Tamb=+60°C, VCC=5.0V Tamb=+40°C, 90%RH Tamb=-10°C, VCC= |
 SL |
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High Speed USB 2.0 Flash Memory Controller ............................................................................................................................. 5 1.3 Block Diagram ........................................................................................................ |
 Silicon Motion |
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N-channel MOSFET • 30V/23A, RDS(ON) = 21mΩ(max.) @ VGS = 10V RDS(ON) = 30mΩ(max.) @ VGS = 4.5V • Provide Excellent Q x R gd DS(ON) • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) • 100% UIS Tested Pin Description Top View Bot |
Sinopower |
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Quartz Crystal Low cost Small size Low resonance frequency Low power consumption Electrical characteristics Nominal frequency Tolerance @ +25°C Load capacitance Nom. Driving Level R serie max Q (Quality factor) Inversion point Temperature coefficient Dynamic capac |
 2B Elettronica |
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N-Channel MOSFET · 30V/35A, RDS(ON) =7.3mW(max.) @ VGS =10V RDS(ON) =10.5mW(max.) @ VGS =4.5V · 100% UIS + Rg Tested · ESD Protection · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description D |
Sinopower |
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P-Channel MOSFET · -30V/-33A, RDS(ON) =18mW(max.) @ VGS =-10V RDS(ON) =30mW(max.) @ VGS =-4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Pin Description Top View Bottom View DDDD Top View Bottom View DDDD SSSG DFN3x3-8(punch t |
Sinopower |
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N-Channel Enhancement Mode MOSFET · 30V/50A, RDS(ON)=10.5mW (max.) @ VGS=10V RDS(ON)=14.5mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description D S G Top View of TO-252-3 D Applications |
Sinopower |
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SM3JZ47 3−10H1A Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 4.5A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-13 SM3GZ47,SM3JZ47 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Ga |
 Toshiba Semiconductor |
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USB2.0 Single-Channel Flash Controller Complete USB2.0 compatibility Complies with USB Mass Storage Class specification version 1.0 Bulk only transport protocol Complies with USB power specifications for bus- powered devices. Operating systems supported: - Window®7/Vista/XP/2000 |
Silicon Motion |
| Total 1010 results |
