SPD50N03S2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanch

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OptiMOS& Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) % Superior thermal resistance % 175°C

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SPD50N03S2L-06 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 6.4 50 P- TO252 -3-11 V mΩ A • Enhancement mode • L

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OptiMOS& Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) % Superior thermal resistance % 175°C

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