SPH Datasheet | Specifications & PDF Download

DataSheet.in O y l n r o f I Z U H N A SPHE8202R Design Guide V2.0 – JUN, 2007 O y l n r o f I Z U H N A 19, Innovation First Road • Sci

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SPHE8203R Design Guide V1.0 – May 20, 2008 19, Innovation First Road • Science Park • Hsin-Chu • Taiwan 300 • R.O.C. Tel: 886-3-578-6005 Fax: 886-3-

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Sunplus confidential SPHE8288T Design Guide V2.1 – July 4, 2014 19, Innovation First Road • Science Park • Hsin-Chu • Taiwan 300 • R.O.C. Tel: 886-3

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Y l ia OG t n L e C d O i f N N I n H o E C S PC HE8200A IS SP E s D uDVD SinT Y gle Chip MPEG A /V l N L p C P r o c essor A I n N N u H S UN C E O R

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VVCC3 VGND C8 0.1UF C7 V_BIAS 2 NC 28 25 VVCC3 VGND A+5V VGND Vref0 PD R37 V_FSADJ 2 680 C10 V_REF 2 0.1UF DVCC3 C9 V_COMP 2 0.1UF A+5V R39 R

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TP65H035G4QS 650V SuperGaN® FET in TOLL (source tab) Preliminary Datasheet Description The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a n

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Surface Mount Phase Shifter 50Ω 360° Voltage Variable 800 to 1500 MHz The Big Deal • Wideband • Excellent VSWR, 1.2:1 typ. • Wide phase shift, 360° S

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SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. is believed to be accurate and reliable. However, SUNPLU

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SPH0645LM4H-B SPH0645LM4H-B Rev B Datasheet I2S  Output Digital Microphone The SPH0645LM4H-B is a miniature, low power, bottom port microphone with

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5 4 3 2 1 Servo analog +5V P+5V R78 EC7 BC4 BC5 BC6 2.2 BC40 0.1uF RFGND GND D A+5V CN2 1 2 3 4 POWER Q1 2SS8550D(EBC,1.5A,1W) DVCC3 L1 EC4 R15

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TPH3006PS PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.15 Qrr (nC) 54 Features  Low Qrr  Free-wheeling diode not required  Low-side

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600V Cascode GaN FET in TO-247 (source tab) TPH3205WS Not recommended for new designs—see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium ni

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Wire Wound SMD Power Inductors – SPH Series Operating Temp. : -40℃~+125℃ (Including self-heating) FEATURES z Magnetic-resin shielded construction red

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Wire Wound SMD Power Inductors – SPH Series Operating Temp. : -40℃~+125℃ (Including self-heating) FEATURES z Magnetic-resin shielded construction red

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TPH3208PS 650V GaN FET TO-220 Series Description The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-

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Inductors – SPN/SPH (Coating) Coating Inductors SPN/SPH Series ▓Feature 1. Small and low profile inductor 2. It corresponds to high current 3. Simple

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Surface Mount Phase Shifter 180° Voltage Variable, Maximum Ratings Operating Temperature Storage Temperature RF Input Power Control Voltage -20°C to

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2SC2542 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-220AB Features High voltage,High sp

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PH CONNECTOR Emboss Tape 2.0mm pitch/Disconnectable Crimp style connectors 2 3 4 5 6 This is a thin, low-profile 2.0mm pitch connector 8.0mm in he

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SPH0641LU4H-1 Digital Zero-Height SiSonicTM Microphone With Multi-Mode And Ultrasonic Support The SPH0641LU4H-1 is a miniature, highperformance, low

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