SPW11N80C3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N80C3 ISPW11N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤450mΩ ·Enhanceme

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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