SPW20N60S5 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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SPW20N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme

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