SS19 Datasheet | Specifications & PDF Download

Preliminary data BSS 192 P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS R

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BSS 192 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8 -2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D

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® WON-TOP ELECTRONICS 1SS193 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suit

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SOT89 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode verti

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DISCRETE SEMICONDUCTORS DATA SHEET BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of July 1993 Fil

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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1SS196 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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® WON-TOP ELECTRONICS 1SS190 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suit

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Production specification Surface mount switching diode FEATURES  Low forward voltage VF(3)=0.9V(typ). Pb Lead-free  Small total capacitance:CT=

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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS196 Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery

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Production specification Surface mount switching diode FEATURES  Low forward voltage Pb VF(3)=0.9V(typ). Lead-free  Small total capacitance:C

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Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS193 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

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SURFACE MOUNT FAST SWITCHING DIODE 1SS190 REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Fast Switching Speed • For general purp

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RoHS 1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS193 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:

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Schottky Rectifier SS12 - S100 Description The SS12−S100 series includes high−efficiency, low power loss, general−propose schottky rectifiers. The cli

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