SS19 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS 1SS190 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suit

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59  L

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application 1SS196 Unit: mm  AEC-Q101 Qualified (Note1)  Small packa

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1SS199 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-299A (Z) Rev. 1 Features • Detection efficiency is very good

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Production specification Surface mount switching diode FEATURES  Low forward voltage VF=0.92V(typ).  Small total capacitance:CT=2.2pF(typ).  Fast

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1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is

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1SS199 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-299A (Z) Rev. 1 Features • Detection efficiency is very good

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 Switching Diode FEATURES y Low forward voltage y Fast r

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® WON-TOP ELECTRONICS SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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RoHS 1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS193 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:

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SURFACE MOUNT FAST SWITCHING DIODE 1SS190 REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES • Fast Switching Speed • For general purp

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1. ANODE 2. N.C. 3. CATHODE Features — Low forward voltage : VF(3)=0.9V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Maximum

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BSS 192 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8 -2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D

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Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099 SS12 THRU SS110 1.0AMP.SURFACE MOUNT SCHOTTKY B

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1. N.C 2. CATHODE 3. ANODE Features — Low forward voltage : VF(3)=0.92V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: E3 Maximum

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS190 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:

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RoHS 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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