® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • S

1SS270A SILICON EPITAXIAL PLANAR H IGH SPEED SWITCHING DIODE Features • Low capacitance. (C=3.0pF max.) • Short reverse recovery time. (trr = 3.5ns ma

SS215 THRU SS220 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Un

SS24 2A, Schottky Barrier Diode SS24 Http//:www.sh-willsemi.com Features  Schottky barrier rectifier  Guarding protection  Low forward voltage 

1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • S

® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

1SS244 Diodes Switching diode 1SS244 Applications High voltage switching General purpose rectification External dimensions (Units : mm) CATHODE BA

Features * Low capacitance * Short reverse recovery time * High reliability * High-speed switching 1SS270A Silicon Epitaxial Planar Switching Diode

NOT RECOMMENDED FOR NEW DESIGNS USE SS22-LTP~SS210-LTP SERIES MCC TM Micro Commercial Components
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OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to

OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to

Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 High Voltage, High Speed Switching Application  Small package : SC−59  Low forward voltage :

SS22F - SS210F SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 2.0 A Features Schottky Barrier Chip Ideally Suited for Au

AOSS21319C 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Complian

1SS270A SILICON EPITAXIAL PLANAR DIODE Features Low capacitance Short reverse recovery time High reliability Mechanical Data Case: DO-35, gla

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse r