SSS Datasheet | Specifications & PDF Download

SSS6N90C-VB www.VBsemi.com SSS6N90C-VB Datasheet N-Channel 900 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (

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www.DataSheet4U.com Features • 2.4-GHz Radio Transceiver • Operates in the Unlicensed Industrial, Scientific, and Medical (ISM) Band • • • • • • • •

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DMN3009SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 5.5mΩ @ VGS = 10V 7.5mΩ @ VGS = 4.5V ID max TA = +25°C 15A

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DMT15H067SSS 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 150V RDS(ON) Max 67mΩ @ VGS = 10V ID Max TA = +25°C 4.5A Description an

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LIQUID CRYSTAL DISPLAY MODULE Product Specification CUSTOMER CUSTOMER PART NUMBER PRODUCT NUMBER Standard DET043WVNMRSSS-1A Product Mgr Bruno Recal

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1.5SMCJ5.0 1.5SMCJ170CA 1.5SMCJ5.0 1.5SMCJ170CA SMD Transient Voltage Suppresssor Diodes SMD Spannungs-Begrenzer-Dioden PPPM = 1500 W PM(AV)

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DataSheet.in DMS3014SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features • DIOFET utilizes a unique patented process to monolithically

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1.5SMCJ5.0 1.5SMCJ170CA 1.5SMCJ5.0 1.5SMCJ170CA SMD Transient Voltage Suppresssor Diodes SMD Spannungs-Begrenzer-Dioden PPPM = 1500 W PM(AV)

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Main Product Characteristics: VDSS RDS(on) ID 150V 9mΩ(typ.) 80A PDFN 5x6-8L SSS1510J7 Pin Assignments Schematic Diagram Features and Benefits:

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1.5SMC220 1.5SMC550CA 1.5SMC220 1.5SMC550CA SMD Transient Voltage Suppresssor Diodes SMD Spannungs-Begrenzer-Dioden PPPM = 1500 W PM(AV) = 5

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LSSSTPAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix SSTPAD10 The LSSSTPAD10 is a low leakage Pico-Amp Diode packaged

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NEW PRODUCT DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(ON) max 11mΩ @ VGS = -20V 17mΩ @ VGS = -6V ID max TA =

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DMT10H025SSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 23mΩ @ VGS = 10V 30mΩ @ VGS = 6V ID Max TA = +25°C 7.4A

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Main Product Characteristics: VDSS 100V RDS(on) 4.2mΩ (typ.) ID 160A TO-220 SSS1004L Features and Benefits:  Advanced MOSFET process technolog

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