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ST1 Matched Datasheet



Part Number Description Manufacture
JST12A
12A TRIAC
1 2 3 TO-220A 1 2 3 TO-220B Insulated Non-Insulated 1 2 3 TO-220C 1 2 3 TO-220F Insulated T1(1) 2 G(3) Symbol IT(RMS) VDRM /VRRM Value 12 600 and 800 and 1200 Unit A V 13 TO-263 T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage j
Manufacture
JIEJIE
JST16A
16A TRIAC
12 3 TO-220A Insulated 12 3 TO-220B Non-Insulated 2 123 TO-220F Insulated 13 TO-263 T1(1) G(3) Symbol IT(RMS) VDRM /VRRM Value 16 600 and 800 and 1200 Unit A V T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage junction tempera
Manufacture
JIEJIE
JST137K
8A TRIAC
2 13 TO-252 1 2 3 TO-220C T1(1) G(3) Symbol IT(RMS) VDRM/VRRM Value 8 600 and 800 Unit A V 123 TO-220F Insulated T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage junction temperature range Tstg Operating junction temperature range
Manufacture
JIEJIE
ST180S12
PHASE CONTROL THYRISTORS
Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Compression Bonded Encapsulation for heavy duty operations such as severe thermal cyclin
Manufacture
International Rectifier
ST10F273
(ST10F273 / ST10F276) 16-bit MCU with MAC unit / up to 832 Kbytes Flash memory and up to 68 Kbytes RAM
to allow software to detect if the device is an F276 or an F273. The missing memory in the ST10F273 can be seen as regular memory. If you wish make two assemblies of the same PCB with the ST10F276 and ST10F276, we advise to put a pull-up resistor on
Manufacture
ST Microelectronics
1803DHI
ST1803DHI
C C January 2000 1/6 ST1803DHI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO www.DataSheet4U.com Parameter Collector Cut-off
Manufacture
STMicroelectronics
ST13007A
High voltage fast-switching NPN power transistor

■ DC current gain classification
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed Applications
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies Description The device is manufactured u
Manufacture
ST Microelectronics
JST137C
8A TRIAC
2 13 TO-252 1 2 3 TO-220C T1(1) G(3) Symbol IT(RMS) VDRM/VRRM Value 8 600 and 800 Unit A V 123 TO-220F Insulated T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage junction temperature range Tstg Operating junction temperature range
Manufacture
JIEJIE
ST17H26
BLE+2.4G dual mode SoC
 Package; Pin layout; Memory; MCU;    Working mode; Wakeup source; RF Transceiver;    Baseband; Clock; Timers; Interrupt; Interface;    QDEC; ADC; PWM; Electrical specification; Application    Brief:  This datasheet is dedicated for Lenze low cost BL
Manufacture
LENZE
ST13003
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• High voltage capability
• Low spread of dynamic parameters
• Very high switching speed Applications 1 2 3
• Electronic ballast for fluorescent lighting (CFL)
• SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram C(
Manufacture
ST Microelectronics

Total 1021 results






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