STP45N10F7 Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor STP45N10F7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·100% avalanche tested ·Minimum Lot-to-Lot var

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STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Data

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