SW10N60 Datasheet | Specifications & PDF Download

SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field eff

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SAMWIN SW10N60 N-channel MOSFET BVDSS : 600V ID : 10.0A RDS(ON) : 0.75ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.75Ω)@VGS=10V

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SAMWIN SW10N60D N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capa

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SAMWIN SW10N60K N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.5Ω)@VGS=10V ■ Gate Charge (Typical 26nC) ■ Improved dv/dt Capability ■

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