Semiwell Datasheet | Specifications & PDF Download

TST002 SEMI CONDUCTOR MJE13002 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ W

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www.DataSheet4U.com Preliminary SemiWell Semiconductor BT152-600 Symbol 3. Gate ○ ○ Silicon Controlled Rectifiers ▼ 1 23 Features Repetitive Pea

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SemiWell Semiconductor Preliminary BT151-600 Silicon Controlled Rectifiers Symbol Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-S

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www.datasheet4u.com SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol STR4A60 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M

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SemiWell Semiconductor SBF13007 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum

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www.datasheet4u.com SemiWell Semiconductor Sensitive Gate Triacs STR4A60S Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State C

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SemiWell Semiconductor Bi-Directional Triode Thyristor Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A )

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SemiWell Semiconductor Bi-Directional Triode Thyristor Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 16 A )

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www.DataSheet4U.com Preliminary SemiWell Semiconductor BT151F-600 Symbol 3. Gate ○ ○ Silicon Controlled Rectifiers Features Repetitive Peak Off-Sta

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SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol STP6A60 ○ Features ◆ Repetitive Peak Off-State Voltage : 600V www.DataSheet4U.com ◆ R

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www.DataSheet4U.com SemiWell Semiconductor SFD/U2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC)

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Preliminary SemiWell Semiconductor BTA12-600B UL : E228720 Symbol ○ Bi-Directional Triode Thyristor Features ◆ R.M.S www.DataSheet4U.com 2.T2 Repe

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Preliminary SIM200D06AV2 VCES = 600V Ic= 200A VCE(ON) typ. = 1.6V @Ic= 200A “HALF-BRIDGE” IGBT Feature ▪ design technology ▪ Low VCE (sat) ▪ Low Tur

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www.DataSheet4U.com SemiWell Semiconductor SFF840 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 38nC) Imp

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SemiWell Semiconductor Bi-Directional Triode Thyristor Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 20 A ) ◆

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www.DataSheet4U.com SFD60N03L Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage VGS = 0V,

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www.DataSheet4U.com SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol STF8A60 UL : E228720 ○ 2.T2 Features ◆ Repetitive Peak Off-Stat

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www.DataSheet4U.com SemiWell Semiconductor SFB95N03L Logic N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.0085Ω )@VGS=10V Low Gate Charge (T

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Preliminary SIM200D06AV1 VCES = 600V Ic= 200A VCE(ON) typ. = 1.8V @Ic= 200A “HALF-BRIDGE” IGBT Feature ▪ design technology ▪ Low VCE (sat) ▪ Low Tur

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www.datasheet4u.com SemiWell Semiconductor Sensitive Gate Triacs Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RM

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