Siemens Semiconductor Group 83 Datasheet | Specifications & PDF Download

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BCR 183 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) Ty

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BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at

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BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 90

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector cur

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BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at

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BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ) T

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BPX 80 BPX 82 89 NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays BPX 80 BPX 82 89 Maße in mm, wenn nicht anders angeg

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Array LED 2 mm LED, Diffused LR Z18 x, LY Z181, LG Z18 x Besondere Merkmale q q q q eingefärbtes, diffuses Gehäuse als optischer Indikator einsetzb

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BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10

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BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) T

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BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz

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BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 9

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BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at

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BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ,R2=10kΩ) Ty

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Silicon Switching Diode Array SMBD 2835 SMBD 2836 For high-speed switching applications q Common anode q Type SMBD 2835 SMBD 2836 Marking sA3 sA2

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NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications q High collector current q High current gain q Complementary types: BCV

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