Siemens Semiconductor Group 83 Datasheet | Pinout, Features, Price Comparison & PDF

BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ) T

Microcomputer Components 16-Bit CMOS Single-Chip Microcontroller SAB 80C166/83C166 Data Sheet 09.94 C16x-Family of High-Performance CMOS 16-Bit Mic

BPX 80 BPX 82 89 NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays BPX 80 BPX 82 89 Maße in mm, wenn nicht anders angeg

Silicon Switching Diode Array SMBD 2837 SMBD 2838 For high-speed switching applications q Common cathode q Type SMBD 2837 SMBD 2838 Marking sA5 sA

BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type BB 619C Marking Ordering Code yellow S

BCR 183 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) Ty

BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) T

BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ,R2=10kΩ) Ty

Silicon Switching Diode Array SMBD 2837 SMBD 2838 For high-speed switching applications q Common cathode q Type SMBD 2837 SMBD 2838 Marking sA5 sA

PNP Silicon AF Transistors BCX 51 BCX 53 Features For AF driver and output stages q High collector current q Low collector-emitter saturation vo

NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications q High collector current q High current gain q Complementary types: BCV

BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 90

BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz

BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10

Silicon Switching Diode Array SMBD 2835 SMBD 2836 For high-speed switching applications q Common anode q Type SMBD 2835 SMBD 2836 Marking sA3 sA2

BB 669 Silicon Tuning Diode Preliminary data • For VHF 2-Band-hyperband-TV-tuners • Very high capacitance ratio • Low series resistance • Extremely sm

BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ, R2 = 47k