Small-Cell Datasheet | Specifications & PDF Download

D A T A S H E E T Sensor systems | Sensors | Lighting Oil Burner Control Applications p Photocells U 1160 small Photocell Glass encapsulated

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TQP9321 High Efficiency 0.5 W Small Cell PA Applications  Small Cell / Picocell  Enterprise Femtocell  Bands 1, 2, 3, 4, 10 and 25 3.5 x 4.5 mm L

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Int

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ ±10 MHz, +27 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matche

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matche

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TQP9224 ® High Linearity 0.25 W Small Cell PA General Description The TQP9224 is a high-linearity three-stage power amplifier in a low-cost surface

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Int

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Int

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FEATURES • InGaP HBT Technology • -51 dBc ACPR @ 65 MHz, +27 dBm • 30.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Match

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DATA SHEET AWB7238: 791 to 821 MHz Small-Cell Power Amplifier Module Applications  LTE, WCDMA and HSDPA air interfaces  Picocell, femtocell, home no

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QPA9226 ® High Linearity 0.25 W Small Cell PA General Description The QPA9226 is a high-linearity three-stage power amplifier in a low-cost surface-m

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Int

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TQP9309 High Efficiency 0.5W Small Cell Power Amplifier Applications  Small-Cell Basestations  Enterprise Femtocell  Bands 5, 6, 8, 12, 13, 14, 17,

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Applications  Small Cell, Picocell  Enterprise Femtocell  Customer Premises Equipment  Data Cards and Terminals  Distributed Antenna Systems (DAS

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FEATURES • InGaP HBT Technology • 2.5% EVM @ +28 dBm (OFDMA) • 31 dB Gain • Integrated Step Attenuator • Integrated Output Power Detector • Hig

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FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Inte

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FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched

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FEATURES • InGaP HBT Technology • -52 dBc ACPR @ ±5 MHz, +27 dBm • 30.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matche

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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Int

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