High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N.
IXYS Corporation
T30N60BD1 - IXST30N60BD1
High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V =.
IXYS Corporation
IXGT30N60BD1 - HiPerFASTTM IGBT with Diode
HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) = 600 V = 60 A = 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC.
IXYS Corporation
IXST30N60BD1 - High Speed IGBT
High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V =.