KEN R TBC-DS TBC-DS . di/dt TBC06DS 6 19.2 96.
ECKTBC101KB - Ceramic Capacitors
Ceramic Capacitors (Safety Regulation SMD) www.DataSheet4U.com Ceramic Capacitors (Safety Regulations) For Surface Mounting Types BC and FC ● Resin .LXES1TBCC2-004 - Silicon ESD protection device
Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 1. Application This specification shall be applied to the ESD Protection D.ECKTBC221KB - Ceramic Capacitors
Ceramic Capacitors (Safety Regulation SMD) www.DataSheet4U.com Ceramic Capacitors (Safety Regulations) For Surface Mounting Types BC and FC ● Resin .TBC548 - Silicon NPN Transistor
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise .TBC556 - Silicon PNP Transistor
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . H.TBC547 - Silicon NPN Transistor
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise .TBC328 - Silicon PNP Transistor
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS.TBC546 - Silicon NPN Transistor
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise .SBX1596-01 - 32 Line Memory for TBC
SBX1596-01 (1/2) IL08 32LINE MEMORY FOR TBC —TOP VIEW— 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 PIN NO. 1 .ECKTBC331KB - Ceramic Capacitors
Ceramic Capacitors (Safety Regulation SMD) www.DataSheet4U.com Ceramic Capacitors (Safety Regulations) For Surface Mounting Types BC and FC ● Resin .ECKTBC332MF - Ceramic Capacitors
Ceramic Capacitors (Safety Regulation SMD) www.DataSheet4U.com Ceramic Capacitors (Safety Regulations) For Surface Mounting Types BC and FC ● Resin .TBC25DS - Hall Current Sensor
KEN R TBC-DS TBC-DS . di/dt TBC06DS 6 19.2 960 1% 100 0.5% 0.625 0.5% (-1db) 50HZ,1min TBC15DS 15 48 1200 1% 100 0.5% 0.625 0.5% TBC25DS TBC50.TBC50DS - Hall Current Sensor
KEN R TBC-DS TBC-DS . di/dt TBC06DS 6 19.2 960 1% 100 0.5% 0.625 0.5% (-1db) 50HZ,1min TBC15DS 15 48 1200 1% 100 0.5% 0.625 0.5% TBC25DS TBC50.TBC50C04 - Hall Current Sensor
KEN R TBC25C04/TBC50C04 TBC25C04/TBC50C04 、,、. () -40℃~+85℃ 50(60)HZ,1min di/dt (-3dB) @70℃ TBC25C04 25 0~±55 .TBC559 - Silicon PNP Transistor
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. THE TBC559 AND TBC560 IS LOW .TBC550 - Silicon NPN Transistor
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB .TBC549 - Silicon NPN Transistor
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES . Low Noise : 4dB Max. (TBC549) 3dB .