TD2 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC=

(2 views)

Naina Semiconductor Ltd. NTD27A Features Thyristor/Diode Module, 25A • Improved glass passivation for high reliability • Exceptional stability at

(2 views)

Series T • Triac output SSRs; Output rated from 10A to 25A @ 24-240 VAC • AC or DC control • Zero-crossing (resistive loads) output PRODUCT SELECTIO

(2 views)

MOSFET – Power, N-Channel, DPAK 20 A, 60 V NTD20N06, NTDV20N06 Description Designed for low voltage, high speed switching applications in power suppli

(2 views)

Elektronische Bauelemente KTD2058 3A, 60V P Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free F

(1 views)

KTD2060 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features hFE , KTB1368

(1 views)

t KTD2150 Programmable Dual Output LCD Bias Power Features Brief Description  Input voltage range (2.7V to 5.5V)  Dual output regulator with sin

(1 views)

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT A

(1 views)

HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT The HGTP2N120BN, HGTD2N120B

(1 views)

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBT The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120

(1 views)

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT The HGTD2N120CNS, HGTP2N120

(1 views)

FGA50N100BNTD2 — 1000 V NPT Trench IGBT FGA50N100BNTD2 1000 V NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2

(1 views)

Ordering number:ENN6429 N-Channel Silicon MOSFET FTD2005 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounti

(1 views)

Ordering number:ENN6430 N-Channel Silicon MOSFET FTD2007 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 4V drive. · Mounting

(1 views)

Ordering number:ENN6072A N-Channel Silicon MOSFET FTD2011 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height

(1 views)

FTD2011A No. FTD2011A µ µ µ   Ω Ω 0.65 8 5 0.5 1 0.25 4 (0.95) 4.5 6.4 0.95 3.0 0.425 0.125 0.1 1.0 FTD2011A VIN 4V 0V VIN VDD=10V

(1 views)

FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enab

(1 views)

Ordering number:ENN6080A N-Channel Silicon MOSFET FTD2013 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height

(1 views)

Ordering number:ENN6267 N-Channel Silicon MOSFET FTD2014 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1

(1 views)

Ordering number:ENN6393 N-Channel Silicon MOSFET FTD2015 Load Switching Applications Features · Low ON resistance. · 4V drive. · Mounting height 1.1

(1 views)