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Vishay Telefunken
BF960 - N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.
Infineon Technologies AG
BF1005SR - Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •.
Siemens Semiconductor Group
BF1009S - Silicon N-Channel MOSFET Tetrode
BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias netwo.
ETC
EL519 - High Performance Beam Power Tetrode
Svetlana EL509 / EL519 / 6KG6 High Performance Beam Power Tetrode The Svetlana EL509 is a beam power tetrode intended for use in class A, AB or B audi.
Siemens Semiconductor Group
BF1005 - Silicon N-Channel MOSFET Tetrode
BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized .
Siemens Semiconductor Group
BF1005S - Silicon N-Channel MOSFET Tetrode
BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized.
Infineon Technologies AG
BF1009SR - Silicon N-Channel MOSFET Tetrode
BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing.
ETC
6P3S - Tetrode
Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L.
ETC
6P3S-E - Tetrode
Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L.
Infineon Technologies AG
BF1005S - Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •.
Infineon Technologies AG
BF1005SW - Silicon N-Channel MOSFET Tetrode
BF1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasin.
Infineon Technologies AG
BF1005W - Silicon N-Channel MOSFET Tetrode
BF1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing .
Siemens Semiconductor Group
BF1009 - Silicon N-Channel MOSFET Tetrode
BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized.
Infineon Technologies AG
BF1009S - Silicon N-Channel MOSFET Tetrode
BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing.
Siemens Semiconductor Group
BF1012 - Silicon N-Channel MOSFET Tetrode
BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized.
