TF5N50 Datasheet | Specifications & PDF Download

TF5N50-VB TF5N50-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC)

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AOTF5N50-VB AOTF5N50-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary The AOT5N50 & AOTF5N50 have been fabricated using an advanced high v

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isc N-Channel MOSFET Transistor AOTF5N50FD FEATURES ·Drain Current –ID= 5.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On

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isc N-Channel MOSFET Transistor AOTF5N50 FEATURES ·Drain Current –ID= 5.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-R

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AOTF5N50FD 500V, 5A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF5N50FD has been fabricated using an advan

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