Toshiba
TIM1011-8UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD
Rating:
1
★
(3 votes)
