Toshiba
TIM1011-8UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD
(6 views)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM1011-8UL Distributor
