Toshiba
TIM1112-15L - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 11.7GHz to 12.7GHz ･HIGH GAIN
G1dB= 6.0dB at 11.7GHz to 12.7GHz ･LOW INTERMOD
Rating:
1
★
(2 votes)
