TIM5964-16SL Datasheet | Specifications & PDF Download

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TIM5964-16SL MICROWAVE POWER GaAs FET

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Toshiba

TIM5964-16SL-422 - MICROWAVE POWER GaAs FET

 FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ･LOW IN.
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Toshiba Semiconductor

TIM5964-16SL - MICROWAVE POWER GaAs FET

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