Toshiba
TIM5964-16SL-422 - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN
G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ･LOW IN
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